- 您現在的位置：買賣IC網 > PDF目錄380501 > MIO1200-33E11 (IXYS CORP) IGBT Module Single switch PDF資料下載
參數資料
| 型號： | MIO1200-33E11 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module Single switch |
| 中文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 封裝： | MODULE-9 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 103K |
| 代理商： | MIO1200-33E11 |
2004 IXYS All rights reserved
1 - 3
4
Advanced Technical Information
MIO 1200-33E11
IXYS reserves the right to change limits, test conditions and dimensions.
I
C80
V
CES
V
CE(sat) typ.
= 3.1 V
= 1200 A
= 3300 V
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
Conditions
Maximum Ratings
V
CES
V
GE
= 0 V
3300
V
V
GES
±
20
V
I
C80
T
C
= 80°C
1200
A
I
CM
t
p
= 1 ms; T
C
= 80°C
2400
A
t
SC
V
CC
= 2500 V; V
= < 3300 V;
V
GE
< 15
V; T
VJ
< 125°C
10
μs
IGBT
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
①
I
C
= 1200 A; V
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
3.1
3.8
V
V
V
GE(th)
I
C
= 240 mA; V
CE
= V
GE
6
8
V
I
CES
V
CE
= 3300 V; V
GE
= 0 V; T
VJ
= 125°C
120 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V; T
VJ
= 125°C
500
nA
E
on
E
off
1750
mJ
2000
mJ
R
thJC
0.0085 K/W
①
Collector emitter saturation voltage is given at chip level
Inductive load; T
= 125°C; V
= ±15 V;
V
CC
= 1800V; I
C
= 1200A; R
G
= 1
;
L
σ
= 100nH
Features
NPT3 IGBT
- Low-loss
- Smooth switching waveforms for
good EMC
Industry standard package
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
Typical Applications
AC power converters for
- industrial drives
- windmills
- traction
LASER pulse generator
C
9
C
7
C
5
C
'
3
E
4
E
6
E
8
E
'
1
G
2
相關PDF資料 |
PDF描述 |
|---|---|
| MIP0210SP | ISOLATOR 3P 25AISOLATOR 3P 25A; Poles, No. of:3; Current rating:25A; Configuration, contact:1 N/O+1 N/C; Depth, external:169mm; IP rating:IP55; Length / Height, external:174mm; Material:Steel; Power, switching AC3 max:5.5kW; Width, |
| MIP0221SY | Silicon MOS IC |
| MIP0222SY | ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW |
| MIP0223SY | ISOLATOR, FLUSH 32A 3 POLE |
| MIP0224SY | Silicon MOS IC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MIO1500-25E10 | 功能描述:IGBT 模塊 1500 Amps 2500V RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIO1800-17E10 | 功能描述:IGBT 模塊 1800 Amps 1700V RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIO-2260 | 制造商:ADVANTECH 制造商全稱:Advantech Co., Ltd. 功能描述:Intel?? Atoma?￠ N455 Pico-ITX SBC, DDR3, 18-bit LVDS, VGA, 1 GbE, Mini PCIe, 2 USB, 2 COM, MIOe |
| MIO-2260NF-S6A1E | 制造商:ADVANTECH 制造商全稱:Advantech Co., Ltd. 功能描述:Intel?? Atoma?￠ N455 Pico-ITX SBC, DDR3, 18-bit LVDS, VGA, 1 GbE, Mini PCIe, 2 USB, 2 COM, MIOe |
| MIO-2261 | 制造商:ADVANTECH 制造商全稱:Advantech Co., Ltd. 功能描述:Intel?? Atoma?￠ N2600/ N2800 Pico-ITX SBC, DDR3, 18/24-bit LVDS, VGA, 1 GbE, Half-size Mini PCIe, 4 USB, 2 COM, SMBus, I2C, mSATA & MIOe |
發布緊急采購，3分鐘左右您將得到回復。