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參數資料
| 型號： | MJ10000 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數： | 1/63頁 |
| 文件大小： | 394K |
| 代理商： | MJ10000 |
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3–433
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
100
_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —
210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
350
Vdc
Collector–Emitter Voltage
VCEX
400
Vdc
Collector–Emitter Voltage
VCEV
450
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
20
30
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation @ TC = 25_C
@ TC =100_C
Derate above 25
_C
PD
175
100
1
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 VOLTS
175 WATTS
MJ10000
CASE 1–07
TO–204AA
(TO–3)
≈ 100
≈ 15
REV 4
相關PDF資料 |
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|---|---|
| MJ1000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ1001 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ10022 | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ3000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ10001 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes |
| MJ10002 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10003 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10004 | 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3 |
| MJ10004 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
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