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參數資料
| 型號： | MJ11013 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 30 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 157K |
| 代理商： | MJ11013 |
1
Motorola Bipolar Power Transistor Device Data
%""$ !$"&
"##$ "#
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
Monolithic Construction with Built–in Base Emitter Shunt Resistor
Rating
Collector–Emitter Voltage
Symbol
MJ11012
MJ11014
90
MJ11016
120
Unit
Vdc
Collector–Base Voltage
60
90
120
Vdc
Emitter–Base Voltage
5
60
Vdc
Collector Current
30
Adc
Base Current
1
Adc
Derate above 25 C @ TC = 100 C
200
Watts
Operating Storage Junction
TJ, Tstg
–55 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
TL
Max
0.87
Unit
C/W
Maximum Lead Temperature for
275
C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈
8.0 k
≈
40
PNP
MJ11013
MJ11015
BASE
EMITTER
COLLECTOR
≈
8.0 k
≈
40
NPN
MJ11012
MJ11014
MJ11016
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11012/D
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJ11014 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJ11014 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11015 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11013 | POWER TRANSISTORS(30A,60-120V,200W) |
| MJ11014 | POWER TRANSISTORS(30A,60-120V,200W) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ11014 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 30 Amp Darlington Transistors NPN |
| MJ11015 | 功能描述:達林頓晶體管 30A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11015 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11015_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Current Complementary Silicon Transistors |
| MJ11015G | 功能描述:達林頓晶體管 30A 120V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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