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參數資料
| 型號： | MJ15021 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| 中文描述： | 4 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數： | 1/4頁 |
| 文件大小： | 135K |
| 代理商： | MJ15021 |
1
Motorola Bipolar Power Transistor Device Data
!$"& %"
"##$ "#
. . . designed for use as high frequency drivers in Audio Amplifiers.
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested
Excellent Frequency Response — fT = 20 MHz min.
Rating
Symbol
Unit
Derate above 25 C
0.86
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
R
θ
JC
Unit
C/W
1.17
0
TC, CASE TEMPERATURE (
°
C)
0
25
75
80
40
100
125
P
175
200
60
20
SECOND BREAKDOWN
DERATING
THERMAL DERATING
50
100
150
Figure 1. Power Derating
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15018/D
*Motorola Preferred Device
4.0 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ15021G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15022 | 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15022_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ15022G | 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15023 | 功能描述:兩極晶體管 - BJT 16A 200V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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