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參數(shù)資料
| 型號： | MJ802 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY HIGH POWER TRANSISTORS |
| 中文描述： | 補充的高功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 136K |
| 代理商： | MJ802 |
1
Motorola Bipolar Power Transistor Device Data
. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.
High DC Current Gain — hFE = 25–100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the PNP MJ4502
(TO–3)
Derate above 25 C
1.14
W/ C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +200
C
200
150
100
50
0
40
60
TC, CASE TEMPERATURE (
°
C)
120
140
200
Figure 1. Power–Temperature Derating Curve
0
20
80
100
160
180
P
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ802/D
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS
200 WATTS
CASE 1–07
REV 7
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| MJ802 | High-Power NPN Silicon Transistor |
| MJ802 | POWER TRANSISTORS(30A,100V,200W) |
| MJD112 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ802 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| MJ802_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER TRANSISTOR |
| MJ802_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High?Power NPN Silicon Transistor |
| MJ802G | 功能描述:兩極晶體管 - BJT 30A 90V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ80C31 | 制造商:Atmel Corporation 功能描述: |
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