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參數資料
| 型號： | MJD112T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 306K |
| 代理商： | MJD112T4 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for TIP110–TIP117 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
MAXIMUM RATINGS
MJD112
MJD117
Collector Current — Continuous
2
Adc
Derate above 25 C
1.75
0.014
Watts
W/ C
R
Thermal Resistance, Junction to Ambient*
71.4
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
ICEO
—
20
μ
Adc
Collector Cutoff Current
ICBO
—
20
μ
Adc
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD112/D
CASE 369A–13
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJD112 | D-PAK for Surface Mount Applications |
| MJD112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD112L | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD122 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD112T4 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR NPN 100V TO-252 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 100V, TO-252 |
| MJD112T4G | 功能描述:達林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112TF | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112-TP | 功能描述:TRANS NPN 100V 2A DPAK RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| MJD117 | 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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