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參數資料
| 型號： | MJD122-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| 中文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/8頁 |
| 文件大小： | 284K |
| 代理商： | MJD122-1 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122
Series, and TIP125–TIP127 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
IC
MJD127
100
Unit
Vdc
Collector–Base Voltage
100
Vdc
Emitter–Base Voltage
5
Vdc
Collector Current — Continuous
8
Adc
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient*
71.4
C/W
ELECTRICAL CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
ICEO
100
—
—
10
Vdc
μ
Adc
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD122/D
CASE 369A–13
SILICON
POWER TRANSISTORS
8 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJD122T4 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD122 | Complementary Darlington Power Transistors |
| MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
| MJD243T4G | Complementary Silicon Plastic Power Transistor |
| MJD243T4 | Complementary Silicon Plastic Power Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD122G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122G | 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON 100V 8A D-PAK 制造商:ON Semiconductor 功能描述:TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK 制造商:ON Semiconductor 功能描述:TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK, Transistor Polarity:NPN, Collector Emit |
| MJD122T4 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
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