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參數資料
| 型號： | MJD18002D2-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, DPAK-3 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 142K |
| 代理商： | MJD18002D2-1 |
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 0
1
Publication Order Number:
MJD18002D2/D
MJD18002D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector–Emitter Diode and Built–In
Efficient Antisaturation Network
The MJD18002D2 is a state–of–the–art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (
±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
guarantee an hFE window.
Main Features:
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I
C = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CEsat
Characteristics Make It Suitable for PFC Application
“6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
Two Versions:
MJD18002D2–1: Case 369 for Insertion Mode
MJD18002D2: Case 369A for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Base Breakdown Voltage
VCBO
1000
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter–Base Voltage
VEBO
11
Vdc
Collector Current – Continuous
Collector Current – Peak (Note 1.)
IC
ICM
2.0
5.0
Adc
Base Current – Continuous
Base Current – Peak (Note 1.)
IB
IBM
1.0
2.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
50
0.4
W
W/
°C
Operating and Storage
Temperature Range
TJ, Tstg
–65 to
+150
°C
Thermal Resistance – Junction–to–Case
RθJC
5.0
°C/W
Thermal Resistance – Junction–to–Ambient
RθJA
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 sec.
TL
260
°C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
http://onsemi.com
DPAK
CASE 369
STYLE 1
2 AMPERES
1000 VOLTS
50 WATTS
POWER TRANSISTOR
MARKING DIAGRAMS
Y
= Year
WW
= Work Week
MJD18002 = Device Code
Device
Package
Shipping
ORDERING INFORMATION
MJD18002D2–1
DPAK
75 Units/Rail
MJD18002D2T4
DPAK
3000/Tape & Reel
DPAK
CASE 369A
STYLE 1
YWW
MJD
18002
YWW
MJD
18002
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD18002D2T4 | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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