- 您現在的位置：買賣IC網 > PDF目錄369917 > MJD200-1 (MOTOROLA INC) SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS PDF資料下載
參數資料
| 型號： | MJD200-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| 中文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 236K |
| 代理商： | MJD200-1 |
1
Motorola Bipolar Power Transistor Device Data
NPN/PNP Silicon DPAK For Surface Mount
Applications
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE= 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat)= 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Symbol
VCB
Value
40
Unit
Vdc
Base Current
PD
1
12.5
Adc
Watts
Total Device Dissipation @ TC = 25 C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
Max
10
Unit
C/W
(VCB = 40 Vdc, IE = 0)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
REV 1
—
100
2%.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD200/D
CASE 369A–13
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS
12.5 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
相關PDF資料 |
PDF描述 |
|---|---|
| MJD200T4 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210-1 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210 | D-PAK for Surface Mount Applications |
| MJD200 | D-PAK for Surface Mount Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| MJD200RL | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200RLG | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200T4 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。