欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): MJD3055
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
中文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 1/6頁
文件大小: 202K
代理商: MJD3055
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient (1)
71.4
C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD2955/D
CASE 369A–13
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關(guān)PDF資料
PDF描述
MJD3055-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:12; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
MJD2955T4 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055T4 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD3055-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055G 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD3055T4 功能描述:兩極晶體管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD3055T4G 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD3055TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 韶山市| 肇庆市| 临江市| 克什克腾旗| 平塘县| 南木林县| 边坝县| 精河县| 临沧市| 东兰县| 枣庄市| 吉林市| 永登县| 浪卡子县| 浦县| 开封县| 肥乡县| 宜州市| 山东省| 普洱| 萝北县| 纳雍县| 集安市| 张家界市| 山阴县| 汉源县| 贡山| 正镶白旗| 淮北市| 昌邑市| 双流县| 盐津县| 丹寨县| 绵阳市| 德保县| 兰西县| 中卫市| 汉源县| 塔河县| 遵义市| 缙云县|