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參數資料
| 型號： | MJD44H11T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | MJD44H11T4G |
1
Motorola Bipolar Power Device Data
DPAK For Surface Mount Application
. . . for general purpose power and switching output or driver stages in applications
such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)
Electrically Similar to Popular D44E3 Device
High DC Gain — 1000 Min @ 5.0 Adc
Low Sat. Voltage — 1.5 V @ 5.0 Adc
Compatible With Existing Automatic Pick & Place Equipment
Derate above 25 C
1.75
0.16
W/ C
Watts
Total Power Dissipation (1)
@ TA = 25 C
PD
Watts
Temperature Range
6.25
C/W
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD44E3/D
NPN DARLINGTON
SILICON
POWER TRANSISTOR
10 AMPERES
80 VOLTS
20 WATTS
*Motorola Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
CASE 369A–13
CASE 369–07
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| MJD44H11T5 | SILICON POWER TRANSISTORS |
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| MJD44H11T4 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
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| MJD44E3-1 | NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD44H11T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252 |
| MJD44H11T5 | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44H11T5G | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44H11TF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44H11TM | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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