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參數資料
| 型號： | MJD45H11G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS |
| 中文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 192K |
| 代理商： | MJD45H11G |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or driver stages in
applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage — VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VEB
IC
D44H11 or D45H11
80
Unit
Vdc
Emitter–Base Voltage
5
Vdc
Collector Current — Continuous
8
Adc
@ TC = 25 C
Derate above 25 C
Total Power Dissipation (1)
PD
0.16
W/ C
Temperature Range
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
R
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient (1)
71.4
C/W
Lead Temperature for Soldering
260
C
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD44H11/D
CASE 369A–13
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| MJD45H11RL | SILICON POWER TRANSISTORS |
| MJD45H11T4 | SILICON POWER TRANSISTORS |
| MJD45H11T4G | SILICON POWER TRANSISTORS |
| MJD45H11-1 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
| MJD45H11T4 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD45H11RL | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11RLG | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11T4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11-T4 | 制造商:STMicroelectronics 功能描述: |
| MJD45H11T4-A | 制造商:STMicroelectronics 功能描述: |
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