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參數資料
| 型號： | MJD6039 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 270K |
| 代理商： | MJD6039 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, convertors, and power amplifiers.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Available on 16 mm Tape and Reel for Automatic Handling (“T4” Suffix)
Surface Mount Replacements for 2N6034–2N6039 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
MAXIMUM RATINGS
MJD6036
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient (1)
71.4
C/W
(IC = 30 mAdc, IB = 0)
Collector–Cutoff Current
(VCE = 40 Vdc, IB = 0)
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
* Pulse Test: Pulse Width
300
μ
s, Duty Cycle
—
10
μ
Adc
2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD6036/D
CASE 369A–13
SILICON
POWER TRANSISTORS
4 AMPERES
80 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 2
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| MJD6039-1 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD6039-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | 功能描述:達林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD6039T4G | 功能描述:達林頓晶體管 2A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD61865501 | 制造商:LG Corporation 功能描述:Strap,Head |
| MJD74C | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
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