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參數資料
| 型號： | MJE13003-X-T60-F-K |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 196K |
| 代理商： | MJE13003-X-T60-F-K |
UNISONIC TECHNOLOGIES CO, LTD
MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co., Ltd
1 of 7
QW-R204-004,E
NPN S ILICON POWER
T RANS IS T ORS
DES CRIPT ION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE .
FEAT URES
* Reverse Biased SOA with Inductive Load @ Tc=100
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100
Typical tc = 290ns @ 1A, 100
* 700V Blocking Capability
.
APPLICAT IONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
TO-126
1
*Pb-free plating product number: MJE13003L
ORDERING INFORMAT ION
Order Number
Pin Assignment
1
2
B
C
Normal
Lead Free Plating
MJE13003L-x-T60-F-K
Package
3
E
Packing
MJE13003-x-T60-F-K
Note: x: Rank, refer to Classification of h
FE1
.
TO-126
Bulk
MJE13003L-x-T60-F-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1)K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of h
FE1
(5) L: Lead Free Plating, Blank: Pb/Sn
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