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參數資料
| 型號： | MJE15029 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 217K |
| 代理商： | MJE15029 |
1
Motorola Bipolar Power Transistor Device Data
!# !
" !
. . . designed for use as high–frequency drivers in audio amplifiers.
DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE
= 20 (Min) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029
VCEO(sus)
= 150 Vdc (Min) — MJE15030, MJE15031
High Current Gain — Bandwidth Product
Collector–Emitter Voltage
Collector–Base Voltage
VCB
VEB
120
120
150
150
Vdc
Vdc
Emitter–Base Voltage
5.0
Vdc
Derate above 25 C
0.40
W/ C
Total Power Dissipation @ TA = 25 C
PD
2.0
Watts
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
θ
JA
Max
2.5
Unit
C/W
0
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
40
TC
20
60
P
0
2.0
TA
1.0
3.0
80
140
TC
TA
20
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15028/D
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120–150 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
相關PDF資料 |
PDF描述 |
|---|---|
| MJE15031 | 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS |
| MJE15028 | 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS |
| MJE15029 | 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS |
| MJE15030 | POWER TRANSISTORS(8.0A,120-150V,50W) |
| MJE15031 | POWER TRANSISTORS(8.0A,120-150V,50W) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE15029 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220 |
| MJE15029G | 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15030 | 功能描述:兩極晶體管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15030G | 功能描述:兩極晶體管 - BJT 8A 150V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15031 | 功能描述:兩極晶體管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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