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參數資料
| 型號： | MJE15031DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/61頁 |
| 文件大小： | 408K |
| 代理商： | MJE15031DW |
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3–684
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use as high–frequency drivers in audio amplifiers.
DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031
High Current Gain — Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO–220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
MJE15028
MJE15029
MJE15030
MJE15031
Unit
Collector–Emitter Voltage
VCEO
120
150
Vdc
Collector–Base Voltage
VCB
120
150
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
— Peak
IC
8.0
16
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
50
0.40
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2.0
0.016
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2.5
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
0
Figure 1. Power Derating
T, TEMPERATURE (
°C)
0
40
60
100
120
160
40
TC
20
60
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
0
2.0
TA
1.0
3.0
80
140
TC
TA
20
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE15028
MJE15030
MJE15029
MJE15031
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120 – 150 VOLTS
50 WATTS
*
NPN
PNP
*
CASE 221A–06
TO–220AB
相關PDF資料 |
PDF描述 |
|---|---|
| MJE15031BU | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15031BA | 8 A, 150 V, PNP, Si, POWER TRANSISTOR |
| MJE15030BS | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| MJE15030BC | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| MJE15029BV | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE15031G | 功能描述:兩極晶體管 - BJT 8A 150V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15032 | 功能描述:兩極晶體管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15032 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-220 |
| MJE15032_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS |
| MJE15032G | 功能描述:兩極晶體管 - BJT 8A 250V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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