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參數資料
| 型號： | MJE16004BG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/65頁 |
| 文件大小： | 502K |
| 代理商： | MJE16004BG |
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3–688
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75
_C (Typ)
70 ns Crossover Time @ 75
_C (Typ)
100_C Performance Specified for:
Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
450
Vdc
Collector–Emitter Voltage
VCEV
850
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
5.0
10
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Lead Temperature for Soldering Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE16002
MJE16004
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
REV 2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE16106 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS |
| MJE16204 | 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220 |
| MJE170 | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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