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參數資料
| 型號： | MJE18002D2AU |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/60頁 |
| 文件大小： | 365K |
| 代理商： | MJE18002D2AU |
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3–712
Motorola Bipolar Power Transistor Device Data
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design
the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are:
Improved Global Efficiency Due to the Low Base Drive Requirements
DC Current Gain Typically Centered at 45
Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
Easy to Use Thanks to the Integrated Collector/Emitter Diode
The MOTOROLA “Sig Sixma” philosophy provides tight and reproductible
parameter distribution.
* High speed High gain BIPolar transistor
** Power Factor Control
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Base Breakdown Voltage
VCBO
1000
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
2
5
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25
°C
PD
50
0.4
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
2.5
62.5
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18002D2
POWER TRANSISTORS
2 AMPERES
1000 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
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| MJE18002D2BU | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BV | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2AN | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE18002G | 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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