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參數(shù)資料
| 型號(hào)： | MJE18204DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/67頁(yè) |
| 文件大小： | 533K |
| 代理商： | MJE18204DW |
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Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE NPN Bipolar
Power Transistor for Electronic
Light Ballast and Switching
Power Supply Applications
The MJE/MJF18204 have an application specific state–of–the–art die dedicated to
the electronic ballast (“l(fā)ight ballast”) and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE18204
MJF18204
Unit
Collector–Emitter Voltage
VCEO
600
Vdc
Collector–Base Voltage
VCBO
1200
Vdc
Collector–Emitter Voltage
VCES
1200
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
5
10
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2
4
Adc
RMS Isolation Voltage (2)
Per Figure 22
(for 1 sec, R.H.
≤ 30%)
Per Figure 23
TC = 25°C
Per Figure 24
VISOL1
VISOL2
VISOL3
4500
3500
1500
Volts
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_C
PD
75
0.6
35
0.28
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18204
MJF18204
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.65
62.5
3.55
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18204
MJF18204
POWER TRANSISTORS
5 AMPERES
1200 VOLTS
35 and 75 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
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| MJE18204BC | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
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| MJE18204AU | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| MJE18204AN | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
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