- 您現在的位置：買賣IC網 > PDF目錄98020 > MJE18604D2DW (ON SEMICONDUCTOR) 3 A, 800 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | MJE18604D2DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/61頁 |
| 文件大小： | 386K |
| 代理商： | MJE18604D2DW |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁
3–779
Motorola Bipolar Power Transistor Device Data
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network for
1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (
±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Breakdown Voltage
VCEO
800
Vdc
Collector–Emitter Sustaining Voltage @ R = 200
VCER
800
Vdc
Collector–Base Breakdown Voltage
VCBO
1600
Vdc
Collector–Emitter Breakdown Voltage
VCES
1600
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
3
8
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25
°C
PD
100
0.8
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
1.25
62.5
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18604D2
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
相關PDF資料 |
PDF描述 |
|---|---|
| MJE18604D2BC | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE18604D2AF | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE18604D2BU | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE2361T | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE2360TAF | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE200 | 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE200_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors |
| MJE200G | 功能描述:兩極晶體管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE200STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE200TSTU | 功能描述:兩極晶體管 - BJT NPN Si Epitaxial Short Leads RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。