- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98022 > MJE5852BS (ON SEMICONDUCTOR) 8 A, 400 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MJE5852BS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/63頁(yè) |
| 文件大小： | 445K |
| 代理商： | MJE5852BS |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)
3–644
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
PNP Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25
_C (Typ)
125 ns Inductive Crossover Time @ 25
°C (Typ)
Operating Temperature Range – 65 to + 150
_C
100
_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJE5850
MJE5851
MJE5852
Unit
Collector–Emitter Voltage
VCEO(sus)
300
350
400
Vdc
Collector–Emitter Voltage
VCEV
350
400
450
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak (1)
IC
ICM
8.0
1 6
Adc
Base Current — Continuous
Peak (1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
80
0.640
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.25
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE5850
MJE5851
MJE5852
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE5850BG | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
| MJE5851DW | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| MJE5852DW | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5850BC | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
| MJE5850BS | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5852G | 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6041 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6043 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6044 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。