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參數資料
| 型號： | MJE702 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | NPN (HIGH DC CURRENT GAIN) |
| 中文描述： | npn型（高直流電流增益） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 256K |
| 代理商： | MJE702 |
1
Motorola Bipolar Power Transistor Device Data
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. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage
Multiplication
Choice of Packages —
MJE700,T
MJE802
MJE803
Derate above 25 C
0.32
0.40
W/ C
Operating and Storage Junction
Temperature Range
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
Max
Unit
C/W
TO–220
2.50
25
TC, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
0
50
125
150
30
P
TO–220AB
40
20
10
75
100
TO–126
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE700/D
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
CASE 77–08
TO–225AA TYPE
MJE700–703
MJE800–803
CASE 221A–06
TO–220AB
MJE700T
MJE800T
REV 3
相關PDF資料 |
PDF描述 |
|---|---|
| MJE703 | NPN (HIGH DC CURRENT GAIN) |
| MJE802 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE800T | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE702 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE703 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE702G | 功能描述:達林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702STU | 功能描述:達林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE703 | 功能描述:達林頓晶體管 4A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE703G | 功能描述:達林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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