- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98022 > MJE8503ABG (ON SEMICONDUCTOR) 5 A, 700 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJE8503ABG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/60頁 |
| 文件大小： | 342K |
| 代理商： | MJE8503ABG |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
3–650
Motorola Bipolar Power Transistor Device Data
Advance Information
SWITCHMODE Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching
in inductive circuits where fall time is critical. They are suited for line operated
switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Featuring
1500 Volt Collector-Base Breakdown Capability
Fast Switching:
180 ns Typical Fall Times
450 ns Typical Crossover Times
1.2
s Typical Storage Times
Low Collector-Emitter Leakage Current — 100 A Max @ 1500 VCES
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO(sus)
700
Vdc
Collector-Emitter Voltage
VCES
1500
Vdc
Collector-Base Voltage
VCBO
1500
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
5.0
10
Adc
Collector Current — Continuous
Collector Current — Peak
IB
IBM
4.0
Adc
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derate above 25
°C
PD
80
21
0.8
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +125
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.25
°C/W
Maximum Lead Temperature for Soldering Purposes
1/8
″ from Case for 5 sec.
TL
275
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
< 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE8503A
POWER TRANSISTORS
5.0 AMPERES
1500 VOLTS — BVCES
80 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE8503AAJ | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| MJE8503AAN | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| MJE8503AAK | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| MJE8503ABC | 5 A, 700 V, NPN, Si, POWER TRANSISTOR |
| MJE9780BU | 3 A, 150 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE9780 | 制造商:ON Semiconductor 功能描述:Trans GP BJT PNP 150V 5A 3-Pin(3+Tab) TO-220AB |
| MJEC15033TR | 制造商:ON Semiconductor 功能描述: |
| MJF122 | 功能描述:達(dá)林頓晶體管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJF122G | 功能描述:達(dá)林頓晶體管 5A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJF127 | 功能描述:達(dá)林頓晶體管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。