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參數資料
| 型號： | MJF47 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | GT 19C 19#12 PIN RECP |
| 中文描述： | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 160K |
| 代理商： | MJF47 |
1
Motorola Bipolar Power Transistor Device Data
Isolated Package Applications
Designed for line operated audio output amplifiers, switching power supply drivers
and other switching applications, where the mounting surface of the device is required
to be electrically isolated from the heatsink or chassis.
Electrically Similar to the Popular TIP47
250 VCEO(sus)
1 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
VISOL
Value
250
Unit
Vdc
Collector–Base Voltage
350
Vdc
Emitter–Base Voltage
5
Vdc
RMS Isolation Voltage (1)
4500
VRMS
Peak
Test No. 1 Per Fig. 10
2
Base Current
IB
PD
0.6
Adc
Total Power Dissipation* @ TC = 25 C
28
Watts
a heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF47/D
NPN SILICON
POWER TRANSISTOR
1 AMPERE
250 VOLTS
28 WATTS
CASE 221D–02
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| MJF47G | 功能描述:兩極晶體管 - BJT 1A 250V 28W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MJF6388_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Darlingtons |
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