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參數(shù)資料
型號: MJH11020
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-218
封裝: CASE 340D-02, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 212K
代理商: MJH11020
1
Motorola Bipolar Power Transistor Device Data
!$"& "$
%" "##$ "#
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
VCEO(sus)
= 200 Vdc (Min) — MJH11020, 19
VCEO(sus)
= 250 Vdc (Min) — MJH11022, 21
Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
Monolithic Construction
MAXIMUM RATINGS
MJH
11018
Collector–Emitter Voltage
VEB
IC
150
200
250
Vdc
Collector–Base Voltage
Emitter–Base Voltage
150
5.0
200
250
Vdc
Vdc
Collector Current — Continuous
15
Adc
Derate Above 25 C
1.2
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
P
160
0
TC, CASE TEMPERATURE (
°
C)
40
60
100
120
160
80
140
20
Figure 1. Power Derating
0
20
40
60
80
100
140
120
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJH11017/D
15 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150, 200, 250 VOLTS
150 WATTS
*Motorola Preferred Device
CASE 340D–01
相關PDF資料
PDF描述
MJH11018 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11019 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11020 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11021 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
MJH11022 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
相關代理商/技術參數(shù)
參數(shù)描述
MJH11020G 功能描述:達林頓晶體管 15A 200V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJH11020G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 200V SOT-93
MJH11021 功能描述:達林頓晶體管 15A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJH11021G 功能描述:達林頓晶體管 15A 250V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJH11021G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR
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