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參數資料
| 型號： | MJL0302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN(互補型NPN) |
| 中文描述： | 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | CASE 340G-02, TO-264, TO-3PBL, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 58K |
| 代理商： | MJL0302A |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 1
1
Publication Order Number:
MJL0281A/D
MJL0281A (NPN)
MJL0302A (PNP)
Preferred Devices
Complementary NPNPNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular MJL3281A and MJL1302A audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 3.0 A
Excellent Gain Linearity
High BVCEO
High Frequency
PbFree Packages are Available*
Benefits
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwith
Applications
HighEnd Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
260
Vdc
CollectorBase Voltage
V
CBO
260
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
V
CEX
I
C
260
Vdc
Collector Current Continuous
Collector Current
Peak (Note 1)
15
30
Adc
Base Current Continuous
I
B
1.5
Adc
Total Power Dissipation @ T
C
= 25
°
C
P
D
180
Watts
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJL0281A
TO264
TO264
CASE 340G
STYLE 2
25 Units/Rail
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
260 VOLTS 180 WATTS
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
MJL0281AG
TO264
(PbFree)
25 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
MJL0xxxA
AYYWWG
MJL0xxxA= Device Code
xxx = 281 or 302
A
= Location Code
YY
= Year
WW
= Work Week
G
= PbFree Package
MJL0302A
TO264
25 Units/Rail
MJL0302AG
TO264
(PbFree)
25 Units/Rail
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJL0302AG | 功能描述:兩極晶體管 - BJT PNP BIP PWR AUDIO TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL1302 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJL1302A | 功能描述:兩極晶體管 - BJT 15A 230V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL1302AG | 功能描述:兩極晶體管 - BJT 15A 230V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJL16218 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR |
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