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參數(shù)資料
| 型號(hào)： | MJW21193 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Power Transistors |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | CASE 340L-02, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | MJW21193 |
MJW21193 (PNP) MJW21194 (NPN)
http://onsemi.com
5
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150
°
C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
Figure 15. MJW21193 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
Figure 16. MJW21194 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C
Figure 17. Typical Total Harmonic Distortion
FREQUENCY (Hz)
TH
D
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100000
10000
1000
100
10
TC = 25
°
C
Cob
Cib
TC = 25
°
C
Cib
Cob
f(test) = 1 MHz)
f(test) = 1 MHz)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW21193_05 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W |
| MJW21193_10 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Silicon Power Transistors |
| MJW21193G | 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21193G | 制造商:ON Semiconductor 功能描述:Transistor |
| MJW21194 | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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