- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382326 > MJW21195 (ON SEMICONDUCTOR) Silicon Power Transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | MJW21195 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Power Transistors |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封裝： | CASE 340L-02, TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 91K |
| 代理商： | MJW21195 |
MJW21195 (PNP) MJW21196 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
VCEO(sus)
ICEO
250
–
–
Vdc
–
–
100
μ
Adc
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
IEBO
ICEX
–
–
50
μ
Adc
–
–
50
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
–
–
–
–
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
–
–
80
–
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VBE(on)
VCE(sat)
–
–
2.0
Vdc
–
–
–
–
1.0
3
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
–
–
0.8
0.08
–
–
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
–
–
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
–
–
500
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
,
T
F
PNP MJW21195
NPN MJW21196
IC, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0
10
0.1
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
0.1
1.0
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
3.5
3.0
,
T
F
VCE = 5 V
VCE = 5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MK4116 | 16,384 X 1 BIT DYNAMIC RAM |
| MK4116P-2 | 16,384 X 1 BIT DYNAMIC RAM |
| MK4116P-3 | 16,384 X 1 BIT DYNAMIC RAM |
| MK48256 | 32K x 8 CMOS STATIC RAM |
| MK48256L | 32K x 8 CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJW21195_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS |
| MJW21195_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJW21195G | 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21196 | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJW21196G | 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。