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參數資料
| 型號： | MKV670 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | MOS FET |
| 中文描述： | 場效應晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | MKV670 |
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
P
D
E
AS
Tch
Tstg
1 P
W
100
μ
s, duty 1%
2 V
DD
=20V, L=10mH, I
L
=7.5A, unclamped,
R
G
=50
Ratings
60
±
30
±
70
±
140
130 (Tc=25oC)
400
Unit
V
(Ta=25oC)
(Ta=25oC)
Symbol
Test Conditions
Ratings
typ
Unit
V
(
BR
)
DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS
(
ON
)
Ciss
I
D
=
100
μ
A, V
GS
=
0V
V
GS
=
±
20V
V
DS
=
60V, V
GS
=
0V
V
DS
=
10V, I
D
=
250
μ
A
V
DS
=
10V, I
D
=
35A
V
GS
=
10V, I
D
=
35A
V
DS
=
10V
f
=
1.0MHz
V
GS
=
0V
60
min
max
μ
A
μ
A
V
±
10
100
4.0
S
V
2.0
30
3.0
m
pF
pF
pF
ns
ns
ns
ns
V
ns
Coss
Crss
t
d
(
on
)
t
r
t
d
(
off
)
t
f
V
SD
I
D
=
20A
V
DD
20V
R
G
=
22
V
GS
=
10V
t
rr
R
th
(
ch-c
)
R
th
(
ch-a
)
I
SD
=
50A, V
GS
=
0V
I
SD
=
25A, d
i
/d
t
=
50A/
μ
s
5.5
4500
2200
1030
100
200
250
150
0.9
6.5
110
1.5
V
A
A
W
mJ
150
oC
oC
–40 to +150
oC
/W
oC
/W
0.961
35.71
Electrical Characteristics
Absolute Maximum Ratings
MOS FET MKV670
000
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions
(1)
(2)
(3)
15.8
±
0.2
(1). Gate
(2). Drain
(3). Source
1.4
2
3
1.05+
0.2
15.6
±
0.4
13.6
9.6
4.8
±
0.2
2.0
±
0.1
3.2
±
0.1
5
±
0
1
2
4
1
±
0
4
2
–
0.1
0.65+
0.2
–
0.1
5.45
±
0.1
5.45
±
0.1
a
b
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