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ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
ML1016R, ML120G6
MITSUBISHI LASER DIODES
DESCRIPTION
FEATURES
ABSOLUTE MAXIMUM RATINGS
Symbol
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
C)
APPLICATION
DVD(Digital Versatile Disc)-RAM/RW Drive
MITSUBISHI
ELECTRIC
Note 3:RL=the load resistance of photodiode for ML1016R
IFD
Forward current (Photodiode)
-
10
mA
Parameter
Conditions
CW
Ratings
Unit
Po
Light output power
35
mW
Pulse(Note 2)
-
-
50
2
30
VRL
VRD
Reverse voltage (laser diode)
Reverse voltage (Photodiode)
V
V
Tc
Case temperature
-
-10
~
+60
Tstg
Storage temperature
-
-40
~
+100
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1μs
Note 1)
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
°
C
°
C
mA
Symbol
Parameter
Test conditions
Min.
Typ.
40
80
Max
70
120
Unit
Ith
Iop
Vop
Threshold current
Operating current
CW
CW,Po=30mW
CW,Po=30mW
-
-
-
mA
mA
V
Slope efficiency
CW,Po=30mW
-
0.7
-
mW/mA
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Monitoring output current
(Photodiode) (only for ML1016R)
Dark current (Photodiode)
Capacitance (Photodiode)
CW,Po=30mW
658
nm
CW,Po=30mW
8.5
°
CW,Po=30mW
CW,Po=30mW,VRD=1V
RL=10
(Note 3)
VRD=10V
f=1MHz,VRD=5V
22
°
Im
0.35
ID
Ct
-
-
-
7
0.5
-
m
A
pF
Operating voltage
2.7
3.0
666
655
11
7
26
17
2.5
0.05
η
λ
p
θ//
θ⊥
ML1XX6 is a high power AlGaInP semiconductor laser
which provides a stable, single transverse mode
oscillation with emission wavelength of 658-nm and
standard CW light output of 30mW.
ML1XX6 has a window-mirror-facet which improves
the maximum output power. That leads to highly
reliable and high-power operation.
High Power: 30mW (CW), 50mW (pulse)
Visible Light: 658nm (typ)
as of December '99