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-
Symbol
Parameter
Conditions
CW
Ratings
60
Unit
Po
Light output power
mW
Pulse(Note 2)
70
2
VRL
Reverse voltage
V
-
Tc
Case temperature
-10
~
+60
Tstg
Storage temperature
-
-40
~
+100
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1
μ
s
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
°
C)
Note 1)
as of December '99
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Section.
°
C
°
C
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
I
th
I
op
Threshold current
Operating current
CW
-
57
mA
CW, Po=50mW
-
132
mA
Slope efficiency
CW, Po=50mW
-
0.67
-
mW/mA
Peak wavelength
Beam divergence angle
(parallel)
CW, Po=50mW
660
nm
CW, Po=50mW
8.5
°
Beam divergence angle
(perpendicular)
CW, Po=50mW
22
°
V
op
η
Operating voltage
CW, Po=50mW
2.5
V
666
-
655
-
-
-
-
-
-
λ
p
θ
//
θ
⊥
3.0
ABSOLUTE MAXIMUM RATINGS
MITSUBISHI
ELECTRIC
FOR OPTICAL INFORMATION SYSTEMS
ML1XX14 SERIES
MITSUBISHI LASER DIODES
FEATURES
High Output Power: 50mW (CW) , 70mW (Pulse)
Visible Light: 660nm (typ.)
APPLICATION
High-Density Optical Disc Drives
Rewritable
DVD(Digital Versatile Disc) Drives
DESCRIPTION
ML1XX14 is a high power AlGaInP semiconductor laser which
provides a stable, single transverse mode
oscillation with
emission wavelength of 660 nm and standard PULSE light
output of 70mW.
ML1XX14 has a window-mirror-facet which improves the
maximum output power. That leads to highly reliable and high-
power operation.
TYPE
NAME
ML101J14, ML120G14
This Model is under development. Therefore, please note that this data sheet may be
changed without any notice.
Under Development
Preliminary