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參數資料
型號: ML725B16F
廠商: Mitsubishi Electric Corporation
英文描述: 2.5Gbps InGaAsP DFB LASER DIODE
中文描述: 2.5Gbps的InGaAsP的DFB激光器二極管
文件頁數: 1/2頁
文件大?。?/td> 51K
代理商: ML725B16F
ML7xx16 SERIES
TYPE
NAME
ML725B16F
MITSUBISHI LASER DIODES
2.5Gbps InGaAsP DFB LASER DIODE
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20oC to 85oC without any
temperature control.
FEATURES
2.5Gbps transmission
APPLICATION
ABSOLUTE MAXIMUM RATINGS
/4 phase shifted grating structure
High side-mode-suppression-ratio (typical 45dB)
Wide temperature range operation
(-20oC to 85oC )
High resonance frequency (typical 11GHz)
ELECTRICAL/OPTICAL CHARACTERISTICS
Tc=25oC
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Beam divergence angle (parallel)
(perpendicular)
Monitoring current (PD)
Rise and fall time(10%-90%)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Ith
CW
CW,Tc=85oC
-
-
10
35
15
50
mA
mA
Iop
CW,Po=5mW
CW,Po=5mW,Tc=85oC
-
-
30
75
40
100
mA
mA
V
Vop
CW,Po=5mW
CW,Po=5mW
1.1
0.25
1.8
-
p
CW,Po=5mW,Tc=-20oC
CW,Po=5mW,Tc=-20oC
+85oC
+85oC
1310
nm
dB
CW,Po=5mW
-
25
47
deg.
deg.
GHz
CW,Po=5mW,VRD=1V
-
11
-
20
-
SMSR
fr
2.48832Gbps, Ibias=Ith,Ipp=40mA
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
40
-
30
35
45
pF
Resonance frequency
tr,tf
2.0
mA
150
1290
1330
-
Limits
Im
Id
Ct
Capacitance (PD)
VRD=5V
VRD=5V,f=1MHz
mW/mA
0.18
CW,Po=5mW
100
-
psec
0.1
-
1.0
A
-
-
10
-
Dark current (PD)
Symbol
Parameter
Conditions
CW
Ratings
Unit
IF
Laser forward current
200
mA
VRL
Laser reverse voltage
-
2
V
Tc
Operation temperature
-
-
-20 ~ +85
Tstg
Storage temperature
-40 ~+100
oC
oC
VRD
-
20
V
Po
Output power
6
mW
PD reverse voltage
IRD
PD forward current
-
2
mA
-
MITSUBISHI
ELECTRIC
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