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參數(shù)資料
| 型號： | ML920J22S |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | InGaAsP DFB LASER DIODES |
| 中文描述： | InGaAsP的DFB激光器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 174K |
| 代理商： | ML920J22S |
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance digital transmission application of coarse
WDM.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
·
~1.25Gbps digital transmission system
·
Coarse WDM application
FEATURES
·
Homogeneous grating (AR/HR facet coating) structure
DFB
·
Wide temperature range operation ( 0 to 85oC )
·
Low threshold current (typical 8mA)
·
High speed response (typical 0.1nsec)
·
8 wavelength with 20nm space at 1470 ~ 1610nm
·
φ
5.6mm TO-CAN package
·
Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
Light output power
If
Forward current (Laser diode)
V
RL
Reverse voltage (Laser diode)
V
RD
Reverse voltage (Photo diode)
I
FD
Forward current (Photo diode)
Tc
Case temperature
Tstg
Storage temperature
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25oC otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Parameter
Test conditions
CW
Ith
Threshold current
CW, Tc=85
oC
CW, Po=5mW
Iop
Operation current
CW, Po=5mW, Tc=85
oC
Vop
Operating voltage
CW, Po=5mW
η
Slope efficiency
CW, Po=5mW
λ
p
Peak wavelength
CW, Po=5mW
θ
//
Beam divergence angle (parallel)
CW, Po=5mW
Beam divergence angle
(perpendicular)
CW, Po=5mW
Tc= 0 to +85
oC
tr,tf
Rise and Fall time
Ib=Ith, 20-80% <*>
Im
Monitoring output current (PD)
CW, Po=5mW
Id
Dark current (PD)
V
RD
=5V
Ct
Capacitance (PD)
V
RD
=5V
<*> Except influence of the 18mm lead.
Parameter
Conditions
CW
---
---
---
---
---
---
Ratings
10
150
2
20
2
0 to +85
-40 to +100
Unit
mW
mA
V
V
mA
oC
oC
Min.
---
---
---
---
---
0.20
Typ.
8
30
25
60
1.1
0.28
<**>
25
Max.
15
50
40
80
1.5
---
Unit
mA
mA
V
mW/mA
nm
deg.
---
35
θ
┴
CW, Po=5mW
---
35
45
deg.
SMSR
Side mode suppression ratio
35
40
---
dB
---
0.05
---
---
0.1
0.2
---
10
0.2
---
0.1
20
ns
mA
μ
A
pF
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
相關PDF資料 |
PDF描述 |
|---|---|
| ML920J22S-04 | InGaAsP DFB LASER DIODES |
| ML920J22S-05 | InGaAsP DFB LASER DIODES |
| ML920J22S-06 | InGaAsP DFB LASER DIODES |
| ML920L11S | InGaAsP DFB LASER DIODES |
| ML925J16F-05 | InGaAsP DFB LASER DIODES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ML920J22S-04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML920J22S-05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML920J22S-06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML920J40S | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML920J40S-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
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