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參數(shù)資料
| 型號： | ML920J40S-08 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 2.5Gbps InGaAsP DFB LASER DIODE |
| 中文描述： | 2.5Gbps的InGaAsP的DFB激光器二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 218K |
| 代理商： | ML920J40S-08 |
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change 2.5Gbps
InGaAsP DFB LASER DIODE
Feb. 2005
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ
/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0
C to 85
C without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po
Output power
If
Forward current (Laser diode)
V
RL
Reverse voltage (Laser diode)
I
FD
Forward current (Photo diode)
V
RD
Reverse voltage (Photo diode)
Tc
Case temperature
Tstg
Storage temperature
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25oC)
Symbol
Parameter
Ith
Threshold current
APPLICATION
·
2.5Gbps long-haul transmission
·
Coarse WDM application
FEATURES
·
λ
/4 shifted grating structure
·
Wide temperature range operation (0
o
C to 85
o
C)
·
High side-mode-suppression-ratio (typical 45dB)
·
High resonance frequency (typical 11GHz)
Conditions
CW
---
---
---
---
---
---
Ratings
6
150
2
2
20
0 to +85
-40 to +100
Unit
mW
mA
V
mA
V
oC
oC
Test conditions
Min. Typ. Max.
---
10
---
35
---
45
---
35
---
70
---
90
---
1.1
0.17
0.22
0.15
0.20
<*4>,<*5>
35
45
---
45
---
25
---
30
Unit
CW
CW
Tc=85
oC
CW, Po=5mW
CW, Po=5mW
Tc=85
oC
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW <*3>
CW, Po=5mW
CW, Po=5mW, Tc=0 to 85
oC
2.48832Gbps,Ib=Ith, Ipp=40mA
CW, Po=5mW
CW, Po=5mW
15
40
50
45
80
100
1.5
---
---
<*1>
<*2>
mA
<*1>
<*2>
Iop
Operation current
mA
Vop
Operating voltage
V
η
Slope efficiency
mW/mA
λ
p
Peak wavelength
Side mode suppression ratio
Side mode suppression ratio(RF)
Beam divergence angle (parallel) <*6>
(perpendicular) <*6>
nm
dB
deg.
deg.
---
---
---
---
SMSR
θ
//
θ
┴
fr
Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=40mA
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW,VRD=1V,RL=10
V
RD
=5V
V
RD
=5V
---
11
---
GHz
tr,tf
Rise and Fall time <*7>
---
80
120
ps
Im
Id
Ct
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
0.1
---
---
---
---
10
1.0
0.1
20
mA
μ
A
pF
ML925B40F / ML920J40S
ML925J40F / ML920L40S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ML920J40S-09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML920J40S-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML920J40S-11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML920J40S-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
| ML920J40S-13 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps InGaAsP DFB LASER DIODE |
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