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參數(shù)資料
型號: MLL1.4KESD90-TR
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
封裝: HERMETIC SEALED, GLASS, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 473K
代理商: MLL1.4KESD90-TR
SURFACE MOUNT TVS
SCOTTSD A L E DIVISION
MLL1.4KESD5.0 thru MLL1.4KESD170CA
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1.4KESD5.0
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DESCRIPTION
APPEARANCE
These small surface mount TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
DO-213AA
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per
MIL-STD-750, Method 1020 (approx. 150 ns
exponential wave, or one microsecond transients up
to 400 watts. See Figure #1 and #2 for overall
transient Peak Pulse Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-213AA Package. Also available in
axial-leaded DO-35 package (see separate data
sheet for 1.4KESD5.0 series)
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Small surface mount foot print
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020
See Surge Rating curves in Figures #1, 2 and 3
Operating and storage temperature –65oC to 175oC
THERMAL RESISTANCE: 150oC/W junction to end
cap
DC power dissipation 500 mW at TEC ≤ 100oC
Derate at 2.3 W/oC above 25oC for PPP (1s) and at
6.67 mW/
oC above 100oC for dc power
Forward Surge Current 50 amps for 1s at TL = 25oC
(rise time > 100 ns)
CASE: Hermetically sealed glass DO-213AA surface
mount package
TERMINALS: Leads, tin-lead plated solderable per
MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.04 grams (typical)
MARKING: Cathode band only
TAPE & REEL option: Standard per EIA-481-B (add
“TR” suffix to part number)
See package dimension on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
10-06-2003 REV A
相關PDF資料
PDF描述
MLL1.4KESD90A-TR UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
MLL1.4KESD90CA-TR BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
MLL1.4KESD28C-TR BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
MLL1.4KESD6.0A-TR UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
MLL1.4KESD11C-TR BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
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