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參數(shù)資料
| 型號(hào)： | MLL14KESD90CTR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 4000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB |
| 封裝： | HERMETIC SEALED, GLASS, MELF-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 161K |
| 代理商： | MLL14KESD90CTR |
SURFACE MOUNT TVS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
MLL14KESD5.0 thru MLL14KESD170A, e3
MLL14
K
ESD5.0
thru
MLL14
K
ESD170
A
DESCRIPTION
APPEARANCE
These surface mount Transient Voltage Suppressor (TVS) devices feature
the ability to clamp dangerous high voltage short-term transients such as
produced by direct or radiated electro-static discharge phenomena before
entering sensitive component regions of a circuit design. They are small
economical TVSs targeted primarily for short term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as seen in Figure 1.
DO-213AB
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Excellent protection in clamping direct ESD level
transients in excess of 40,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients of 14,000 Watts per MIL-
STD-750, Method 1020 (approximately 150 ns
exponential wave, or one microsecond transients up to
4000 watts. See Figure #1 and #2 for overall transient
Peak Pulse Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5V to 170V
Hermetic DO-213AB package. Also available in axial-
leaded DO-41package (see separate data sheet for
14KESD5.0 series)
RoHS Compliant devices available by adding “e3” suffix
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Minimal capacitance (See Figure #3)
Small surface-mount footprint for high density
mounting
Bidirectional features available by adding a “C” or
“CA” suffix to part number
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
4000 Watts for One Microsecond Square Wave or
14,000 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
Operating and storage temperature –65oC to 175oC
Thermal Resistance: 40 C/W junction to end cap, or
120
C/W junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint (see
last page)
Steady-State Power: 1.50 watts at T
EC < 115
oC, or
1.25 watts at TA = 25
C when mounted on FR4 PC
board and recommended footprint as described for
thermal resistance (also see Figure 1)
Derate at 22.8 W/oC above 25oC for P
PP (1μs) and at
15 mW/
oC above 75oC for dc power.
Forward Surge Current 500 amps for 1μs at T
L =
25
oC (rise time > 100 ns).
CASE: Hermetically sealed DO-213AB glass MELF
package
FINISH: End caps are tin-lead or RoHS compliant
matte-Tin plated solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band.
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-B
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2007
8-27-2007 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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