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參數資料
| 型號： | MM118-12 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
| 中文描述： | 52 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | HERMETIC SEALED, POWER MODULE-16 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 116K |
| 代理商： | MM118-12 |
MM118-XX
SERIES
600 / 1200 Volts
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
Features
Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T” suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
Maximum Ratings per switch @ 25
°
C (unless otherwise specified)
PART NUMBER
SYMBOL
MM118-06
MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ T
j
≥
25
°
C
Collector-to-Gate Breakdown Voltage @ T
j
≥
25
°
C, R
GS
= 1
M
Gate-to-Emitter Voltage continuous
transient
Continuous Collector Current T
j
=
25
°
C
T
j
= 90
°
C
Peak Collector Current, pulsewidth limited by T
j max
Power Dissipation
Thermal resistance, junction to base per switch
BV
CES
600 V
1200 V
BV
CGR
600 V
1200 V
V
GES
V
GEM
I
C25
I
C90
+/- 20 V
+/- 30 V
60 A
32 A
+/- 20 V
+/- 30 V
52 A
33 A
I
CM
P
D
120 A
165 W
0.75
°
C/W
104 A
165 W
0.75
°
C/W
R
Θ
jc
, max
Mechanical Outline
Datasheet# MSC0321A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
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| MM118-XX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
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