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參數(shù)資料
| 型號(hào)： | MMBD1005LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODE |
| 中文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 160K |
| 代理商： | MMBD1005LT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100
μ
A)
Reverse Voltage Leakage Current (VR = 75 V)(2)
Forward Voltage (IF = 1.0 mA)
Forward Voltage
(IF = 10 mA)
V(BR)
IR
VF
30
—
V
—
500
pA
—
—
850
950
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a non–forward–biased condition.
CD
trr
—
2.0
pF
—
3.0
μ
s
Figure 1. Recovery Time Equivalent Test Circuit
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2 k
820
0.1
μ
F
DUT
VR
100
μ
H
0.1
μ
F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
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