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參數資料
| 型號： | MMBD2835LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | MMBD2835LT1G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 4
1
Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1,
MMBD2836LT1
Monolithic Dual Switching
Diodes
Features
PbFree Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
V
R
35
75
Vdc
Forward Current
I
F
100
mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation FR5 Board
(Note 1)
T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
http://onsemi.com
MARKING DIAGRAM
A3X = MMBD2835LT1
A2X = MMBD2836LT1
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
xxx M
1
2
3
SOT23 (TO236AB)
CASE 31808
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
1
xxx
= Specific Device Code
M
Device
Package
Shipping
ORDERING INFORMATION
MMBD2835LT1
SOT23
3000 / Tape & Reel
MMBD2835LT1G
SOT23
(PbFree)
3000 / Tape & Reel
MMBD2836LT1
SOT23
3000 / Tape & Reel
MMBD2836LT1G
SOT23
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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PDF描述 |
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| MMBD2836LT1G | Monolithic Dual Switching Diodes |
| MMBD2837LT1G | Monolithic Dual Switching Diodes |
| MMBD2838LT1G | Monolithic Dual Switching Diodes |
| MMBD301LT1G | Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD2835LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes |
| MMBD2836 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Surface mount switching diode |
| MMBD2836G | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:Monolithic Dual Switching Diode |
| MMBD2836LT1 | 功能描述:二極管 - 通用，功率，開關 75V 200mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD2836LT1G | 功能描述:二極管 - 通用，功率，開關 75V 200mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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