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參數資料
| 型號： | MMBD2837LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 單片雙開關二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | MMBD2837LT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Peak Reverse Voltage
VRM
VR
75
Vdc
D.C. Reverse Voltage
MMBD2837LT1
MMBD2838LT1
30
50
Vdc
Peak Forward Current
IFM
450
300
mAdc
Average Rectified Current
IO
150
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
μ
Adc)
MMBD2837LT1
MMBD2838LT1
V(BR)
35
75
—
—
Vdc
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1
MMBD2838LT1
IR
—
—
0.1
0.1
μ
Adc
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage
(IF = 50 mAdc)
Forward Voltage
(IF = 100 mAdc)
CT
VF
—
4.0
pF
—
—
—
1.0
1.0
1.2
Vdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
—
4.0
ns
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBD2837LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
3
CATHODE
2
ANODE
ANODE
1
REV 1
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|---|---|
| MMBD2838LT1 | Monolithic Dual Switching Diodes |
| MMBD2837 | MONOLITHIC DUAL SWITCHING DIODE |
| MMBD2838 | MONOLITHIC DUAL SWITCHING DIODE |
| MMBD451LT1 | Schottky Barrier Diodes |
| MMBD717LT1 | Common Anode Schottky Barrier Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD2837LT1G | 功能描述:二極管 - 通用，功率，開關 75V 150mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD2837LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SWITCH DIODE, CMN CTHD, 0.15A SOT23 |
| MMBD2837LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes |
| MMBD2838 | 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD2838_Q | 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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