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參數資料
| 型號： | MMBD352LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Hot Carrier Mixer Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 100K |
| 代理商： | MMBD352LT3 |
Semiconductor Components Industries, LLC, 2006
September, 2006
Rev. 6
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1,
MMBD353LT1,
MMBD354LT1,
MMBD355LT1
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra
fast switching
circuits.
Features
Very Low Capacitance
Less Than 1.0 pF @ Zero V
Low Forward Voltage
0.5 V (Typ) @ I
F
= 10 mA
Pb
Free Packages are Available
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
V
R
7.0
V
CC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR
5 Board,
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction
to
Ambient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction
to
Ambient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR
5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
(EACH DIODE)
Rating
Symbol
Min
Max
Unit
Forward Voltage
(I
F
= 10 mAdc)
V
F
0.60
V
Reverse Leakage Current (Note 3)
(V
R
= 3.0 V)
(V
R
= 7.0 V)
I
R
0.25
10
A
Capacitance
(V
R
= 0 V, f = 1.0 MHz)
3. For each individual diode while the second diode is unbiased.
C
1.0
pF
http://onsemi.com
SOT
23 (TO
236)
CASE 318
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
Mxx M
Mxx = Device Code
M
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MMBD352LT1
STYLE 11
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD353LT1
STYLE 19
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD354LT1
STYLE 9
3
CATHODE
1 ANODE
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1
STYLE 12
2 ANODE
相關PDF資料 |
PDF描述 |
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| MMBD352LT3G | Dual Hot Carrier Mixer Diodes |
| MMBD353LT1G | Dual Hot Carrier Mixer Diodes |
| MMBD353LT3 | Dual Hot Carrier Mixer Diodes |
| MMBD353LT3G | Dual Hot Carrier Mixer Diodes |
| MMBD354LT1G | Dual Hot Carrier Mixer Diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD352LT3G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MMBD352W | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352WT1 | 功能描述:肖特基二極管與整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD352WT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diode |
| MMBD352WT1G | 功能描述:肖特基二極管與整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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