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參數(shù)資料
| 型號： | MMBF2202PT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 179K |
| 代理商： | MMBF2202PT3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
300
240
750
mAdc
PD
150
1.2
mW
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
833
°
C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
260
°
C
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2202PT1
7
″
8 mm embossed tape
3000
MMBF2202PT3
13
″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF2202PT1/D
SEMICONDUCTOR TECHNICAL DATA
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
Motorola Preferred Device
3 DRAIN
1
GATE
2 SOURCE
CASE 419–02, STYLE 7
SC–70/SOT–323
REV 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF4091 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4091 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET, -40V, SOT-23 |
| MMBF4091_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4092 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4092_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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