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參數資料
| 型號： | MMBF5457LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | JFET - General Purpose Transistor N-Channel |
| 中文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封裝： | LEAD FREE, CASE 318-08, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 64K |
| 代理商： | MMBF5457LT1G |
Semiconductor Components Industries, LLC, 2005
July, 2005 Rev. 4
1
Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
Preferred Device
JFET General Purpose
Transistor
NChannel
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
25
Vdc
DrainGate Voltage
V
DG
25
Vdc
Reverse GateSource Voltage
V
GS(r)
25
Vdc
Gate Current
I
G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1)
(T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
556
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMBF5457LT1
SOT23
3000/Tape & Reel
SOT23 (TO236)
CASE 318
STYLE 10
MARKING DIAGRAM
1
2
3
2 SOURCE
3
GATE
1 DRAIN
1
6 M
MMBF5457LT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
6
M
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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| MMBF5484LT1G | JFET Transistor N−Channel |
| MMBF5484LT1 | JFET Transistor N(N溝道JFET晶體管) |
| MMBFJ175LT1G | JFET Chopper P-Channel - Depletion |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF5457LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5459 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5459_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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