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參數資料
| 型號： | MMBFJ113D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件頁數： | 1/13頁 |
| 文件大小： | 488K |
| 代理商： | MMBFJ113D87Z |
5
G
D
S
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
35
V
VGS
Gate-Source Voltage
- 35
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
SOT-23
Mark: 6P / 6R / 6S
G
S
D
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J1
1
/
J1
12
/
J1
13
/
MMBFJ1
1
/
MMBFJ1
12
/
MMBFJ1
13
Symbol
Characteristic
Max
Units
J111-113
*MMBFJ111-113
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
J111/112/113/MMBFJ111/112/113, Rev A
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