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參數(shù)資料
| 型號(hào)： | MMBFJ309LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | JFET - VHF/UHF Amplifier Transistor N-Channel |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 封裝： | ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 72K |
| 代理商： | MMBFJ309LT1G |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MMBFJ309LT1/D
MMBFJ309LT1,
MMBFJ310LT1
JFET VHF/UHF Amplifier
Transistor
NChannel
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
25
Vdc
GateSource Voltage
V
GS
25
Vdc
Gate Current
I
G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 10
Device
Package
Shipping
ORDERING INFORMATION
MMBFJ309LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBFJ309LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
1
2
3
MMBFJ310LT1
SOT23
3,000 / Tape & Reel
MMBFJ310LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
6x M
6x
= Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
M
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBFJ309LT1G | 制造商:ON Semiconductor 功能描述:RF JFET |
| MMBFJ309LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor |
| MMBFJ310 | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBFJ310_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier |
| MMBFJ310_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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