欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MMBR571LT1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: NPN Silicon High-Frequency Transistors
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數: 1/16頁
文件大小: 212K
代理商: MMBR571LT1
1
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
Value
10
20
3.0
80
Unit
Vdc
Vdc
Vdc
mA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ Tcase = 75
°
C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75
°
C @
Total Device Dissipation (1) @ TC = 75
°
C
Derate above 75
°
C
Operating and Storage Temperature
0.33
4.44
0.58
7.73
–55 to
+150
W
mW/
°
C
Watts
mW/
°
C
°
C
MRF571
PD
Tstg
THERMAL CHARACTERISTICS
Rating
Symbol
R
θ
JC
Max
225
Unit
°
C/W
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
Thermal Resistance, Junction to Case
Maximum Junction Temperature
DEVICE MARKING
MMBR571LT1 = 7X
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
MRF571
R
θ
JC
TJmax
130
150
°
C/W
°
C
MRF5711LT1 = 02
Order this document
by MMBR571LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
CASE 317–01, STYLE 2
MACRO–X
MRF571
REV 8
相關PDF資料
PDF描述
MMBR901LT1 NPN Silicon High-Frequency Transistor
MMBR901LT3 NPN Silicon High-Frequency Transistor
MMBR911LT1 NPN Silicon High-Frequency Transistor
MMBR911 NPN Silicon High-Frequency Transistor
MMBR920L NPN SILICON HIGH FREQUENCY TRANSISTOR
相關代理商/技術參數
參數描述
MMBR901LT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor
MMBR901LT3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor
MMBR911 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor
MMBR911LT1 制造商:Freescale Semiconductor 功能描述:
MMBR911LT1G 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR
主站蜘蛛池模板: 昭觉县| 太谷县| 汾阳市| 玛曲县| 平和县| 册亨县| 通渭县| 梁平县| 林周县| 淮滨县| 沧州市| 天柱县| 满洲里市| 酒泉市| 集安市| 马龙县| 东乌珠穆沁旗| 喀喇沁旗| 蒙自县| 阜平县| 潞西市| 古交市| 图们市| 上思县| 蒙自县| 富川| 兰坪| 特克斯县| 右玉县| 新闻| 加查县| 张掖市| 大足县| 修文县| 江陵县| 河北区| 南投县| 新蔡县| 兰溪市| 壶关县| 团风县|