- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98024 > MMBT200AD87Z (FAIRCHILD SEMICONDUCTOR CORP) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBT200AD87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 519K |
| 代理商： | MMBT200AD87Z |
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
PN200
PN200A
*MMBT200
*MMBT200A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
SOT-23
Mark: N2 / N2A
C
B
E
TO-92
C
B
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200
/
MMBT200
/
PN200A
/
MMBT200A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT200D87Z | 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2222AWT3 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2369AD87Z | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2369ALT3 | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2369LT3 | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2131T1 | 功能描述:兩極晶體管 - BJT 700mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2131T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MMBT2131T1G | 功能描述:兩極晶體管 - BJT 700mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2131T3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MMBT2132T1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。