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參數(shù)資料
| 型號(hào)： | MMBT2222AK |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 253K |
| 代理商： | MMBT2222AK |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2222
2222A
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
30
40
Vdc
Collector–Base Voltage
60
75
Vdc
Emitter–Base Voltage
5.0
6.0
Vdc
Collector Current — Continuous
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
DEVICE MARKING
–55 to +150
°
C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
—
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125
°
C)
(VCB = 60 Vdc, IE = 0, TA = 125
°
C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
MMBT2222A
ICEX
ICBO
—
10
nAdc
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
—
—
—
—
0.01
0.01
10
10
μ
Adc
MMBT2222A
IEBO
IBL
—
100
nAdc
MMBT2222A
—
20
nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2222LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2222 | Surface mount Si-Epitaxial PlanarTransistors |
| MMBT2222A | Surface mount Si-Epitaxial PlanarTransistors |
| MMBT2222ALT1 | General Purpose Transistors(NPN Silicon) |
| MMBT2222AWT1 | Preliminary Information General Purpose Transistors |
| MMBT2222LT1 | General Purpose Transistors(NPN Silicon) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222AK | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MMBT2222AL-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AL-AL3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222AL-AN3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| MMBT2222ALP4-7B | 功能描述:MOSFET General Purpose Tran X2-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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