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參數資料
| 型號： | MMBT2369A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Switching Transistor |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/8頁 |
| 文件大小： | 304K |
| 代理商： | MMBT2369A |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VCBO
VEBO
IC
15
Vdc
Collector–Emitter Voltage
40
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
4.5
Vdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
200
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10
μ
Adc, VBE = 0)
V(BR)CES
40
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
40
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
4.5
—
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150
°
C)
ICBO
—
—
—
—
0.4
30
μ
Adc
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
1. FR–5 = 1.0
2. Alumina = 0.4
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
MMBT2369A
ICES
—
—
0.4
μ
Adc
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2369LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
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PDF描述 |
|---|---|
| MMBT2369LT1 | Switching Transistors(NPN Silicon) |
| MMBT2369ALT1 | Switching Transistors(NPN Silicon) |
| MMBT2484LT1 | Low Noise Transistor |
| MMBT2484 | Mini size of Discrete semiconductor elements |
| MMBT2484LT1 | Low Noise Transistor(NPN Silicon) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2369A | 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO |
| MMBT2369A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBT2369A_Q | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369AL | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
| MMBT2369ALT1 | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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