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參數資料
| 型號： | MMBT2369LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching Transistors NPN Silicon |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 95K |
| 代理商： | MMBT2369LT1G |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 5
1
Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
15
Vdc
CollectorEmitter Voltage
V
CES
40
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
4.5
Vdc
Collector Current Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
MMBT2369LT1
SOT23
3000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAMS
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2369ALT1
SOT23
3000/Tape & Reel
http://onsemi.com
xxx = M1J or 1JA
M
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBT2369ALT1G
SOT23
(PbFree)
3000/Tape & Reel
MMBT2369LT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT23
CASE 318
STYLE 6
1
2
1
3
xxx M
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2369LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switching Transistors |
| MMBT2369LT3 | 制造商:Motorola 功能描述:2369 MOT'91 T/R LOC: S2C7A |
| MMBT2369LT3G | 功能描述:兩極晶體管 - BJT SS GP XSTR NPN 15V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT-2369-TR | 制造商:Taitron Components Inc 功能描述: |
| MMBT2484 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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